O8Sn2Zn4 is a tin-zinc oxide compound, likely a mixed-metal oxide semiconductor belonging to the family of transparent conductive oxides (TCOs) or wide-bandgap semiconductors. This composition suggests a ternary or quaternary oxide system that may exhibit interesting electronic and optical properties for emerging device applications. The material appears to be in the research and development phase; compounds of this type are being explored for applications where conventional indium tin oxide (ITO) alternatives are needed, particularly in cost-sensitive or functionally-demanding contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.040 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.658 | eV/atom | — |