O8 P2 In2

semiconductor

· O8 P2 In2

O8P2In2 is a ternary semiconductor compound containing indium, oxygen, and phosphorus, representing an emerging material in the III-V oxide-phosphide family. This composition sits at the intersection of indium phosphide (InP) and indium oxide systems, making it a candidate for optoelectronic and photovoltaic applications where bandgap engineering and heterostructure design are critical. As a research-stage material, it may offer advantages in high-frequency devices, solar cells, or integrated photonics where conventional InP or indium oxide variants have limitations, though commercial deployment remains limited compared to mature semiconductor platforms.

Research optoelectronicsBandgap engineeringHigh-frequency semiconductorsPhotovoltaic researchHeterostructure integrationExperimental compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	101.1	GPa	—
Shear Modulus(G)	55.80	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.635	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.111	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O8 P2 In2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control