O8 Nb2 Er2 is an experimental ternary oxide semiconductor compound combining niobium and erbium oxides, likely investigated for electronic or photonic applications where rare-earth doping provides functional benefits. While not established in mainstream commercial production, materials in this niobium-erbium oxide family are of research interest for their potential in high-temperature electronics, optical devices, and specialized thin-film applications where rare-earth elements enhance photoluminescence, magnetic, or dielectric properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 158.1 | GPa | — | ||
Shear Modulus(G) | 68.94 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.487 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.352 | eV/atom | — |