O8Mg4Ge2 is an experimental intermetallic compound combining magnesium and germanium with oxygen, belonging to the ternary oxide-metal family of semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where the combination of light elements (Mg, Ge) and tunable band structure offers potential advantages in efficiency or processing cost compared to conventional silicon or III-V semiconductors. While not yet commercialized at scale, compounds in this family are being explored for next-generation solar cells, photodetectors, and potentially high-frequency electronic devices where the magnesium-germanium interaction may yield unique electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 164.9 | GPa | — | ||
Shear Modulus(G) | 103.0 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.282 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.562 | eV/atom | — |