O8 K3 Nb1 is an experimental oxide-based semiconductor compound containing niobium, likely belonging to a complex oxide or perovskite-related family being investigated for functional electronic applications. This material represents research-stage development rather than a production semiconductor, with potential relevance to researchers exploring novel electronic, photonic, or energy conversion properties through niobium-containing oxide systems. The specific composition suggests targeted engineering of crystal structure and electronic band properties for specialized device applications that cannot be met by conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.81 | GPa | — | ||
Shear Modulus(G) | 19.71 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.647 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.538 | eV/atom | — |