O8 Bi4 is a bismuth-oxygen compound semiconductor, likely a bismuth oxide or mixed-valence bismuth oxide phase with potential applications in optoelectronics and photocatalysis. This material belongs to the broader family of bismuth-based semiconductors, which have attracted research interest for visible-light-responsive properties and low toxicity compared to heavy-metal alternatives. Engineers would consider O8 Bi4 primarily in emerging applications where bismuth compounds offer advantages in environmental sustainability, though availability of detailed property data and manufacturing maturity should be verified for production-scale deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01760 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6980 | eV/atom | — |