O8As2Tb2 is an experimental rare-earth semiconductor compound containing terbium and arsenic, belonging to the family of rare-earth pnictide materials under active research for advanced electronic and photonic applications. This material represents an emerging class of compounds being investigated for potential use in high-performance semiconductor devices where rare-earth elements can introduce unique electronic and magnetic properties not available in conventional semiconductors. The terbium content suggests potential applications in magneto-optic or luminescent device research, though this compound remains primarily in the development phase and is not yet widely commercialized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 140.5 | GPa | — | ||
Shear Modulus(G) | 66.49 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.852 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.523 | eV/atom | — |