O7 Ge2 In2

semiconductor

· O7 Ge2 In2

O7Ge2In2 is an experimental mixed-metal oxide semiconductor compound containing germanium and indium oxides in a defined stoichiometric ratio. This material belongs to the broader family of complex oxide semiconductors being investigated for optoelectronic and photocatalytic applications where traditional single-element semiconductors have limitations. The indium-germanium oxide system is of research interest for potential use in transparent conducting oxides, photovoltaic devices, and environmental remediation applications, though commercialization remains limited and this composition is primarily encountered in materials science research rather than established industrial production.

optoelectronic device researchphotocatalytic materials developmenttransparent conducting oxidesnext-generation photovoltaicsmaterials science experimentationsemiconductor compound research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	137.1	GPa	—
Shear Modulus(G)	49.21	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.975	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.726	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O7 Ge2 In2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control