O6Y1Sb1Ba2 is an experimental oxide semiconductor compound containing barium, yttrium, and antimony elements. This material belongs to the family of mixed-metal oxides under investigation for potential optoelectronic and photonic applications, though it remains a research-phase composition without established commercial production. The combination of these elements suggests potential interest in photocatalysis, light emission, or electronic device layers, but practical engineering adoption would depend on demonstrating reproducible synthesis, thermal stability, and performance advantages over conventional semiconductors like gallium arsenide or indium phosphide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 136.3 | GPa | — | ||
Shear Modulus(G) | 85.08 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.864 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.916 | eV/atom | — |