O6Sb1Ba2Er1 is an experimental oxide semiconductor compound containing barium, erbium, and antimony in a mixed-valence crystal structure. This rare-earth doped material is primarily of research interest for optoelectronic and photonic applications, where the erbium dopant can provide luminescent or amplification properties in the infrared spectrum. While not yet established in high-volume industrial production, compounds in this family are explored for potential use in fiber-optic signal processing, laser gain media, and specialized sensing devices where rare-earth-active semiconductors offer performance advantages over conventional alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 141.8 | GPa | — | ||
Shear Modulus(G) | 89.06 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.625 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.928 | eV/atom | — |