O6 Ru1 Ba2 Ho1
semiconductorO6Ru1Ba2Ho1 is an experimental mixed-metal oxide semiconductor containing ruthenium, barium, and holmium. This compound belongs to the family of complex transition-metal oxides, which are of research interest for their potential electronic, magnetic, and catalytic properties arising from the combination of rare-earth (holmium) and transition-metal (ruthenium) sites. While not yet deployed in mainstream commercial applications, materials in this chemical family are investigated for next-generation electronics, solid-state devices, and photocatalytic or magnetoelectric applications where the interplay between different metal oxidation states and rare-earth magnetism offers novel functionality unavailable in simpler semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |