O6 Ru1 Ba2 Ho1

semiconductor

· O6 Ru1 Ba2 Ho1

O6Ru1Ba2Ho1 is an experimental mixed-metal oxide semiconductor containing ruthenium, barium, and holmium. This compound belongs to the family of complex transition-metal oxides, which are of research interest for their potential electronic, magnetic, and catalytic properties arising from the combination of rare-earth (holmium) and transition-metal (ruthenium) sites. While not yet deployed in mainstream commercial applications, materials in this chemical family are investigated for next-generation electronics, solid-state devices, and photocatalytic or magnetoelectric applications where the interplay between different metal oxidation states and rare-earth magnetism offers novel functionality unavailable in simpler semiconductors.

Research and developmentNext-generation semiconductorsMagnetoelectric devicesPhotocatalytic applicationsAdvanced materials researchSolid-state electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	144.9	GPa	—
Shear Modulus(G)	82.00	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.678	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.714	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O6 Ru1 Ba2 Ho1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control