Ba₂MnTeO₆ is an oxide semiconductor compound belonging to the perovskite or double-perovskite family, combining barium, manganese, and tellurium in a structured ceramic lattice. This is a research-phase material studied primarily for its electronic and magnetic properties rather than established industrial production. The material family shows promise for photovoltaic applications, magnetic semiconductors, and solid-state device research, though it remains largely in the exploratory stage pending demonstration of performance advantages over conventional oxide semiconductors like those based on lead or tin.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04760 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.183 | eV/atom | — |