O6In4 is an indium oxide-based semiconductor compound, likely a ternary or mixed-valence oxide system combining indium with oxygen in a defined stoichiometric ratio. This material belongs to the family of transparent conductive oxides (TCOs) and wide-bandgap semiconductors, though this specific composition appears to be a research or specialized compound rather than a commodity semiconductor.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 159.1 | GPa | — | ||
Shear Modulus(G) | 62.43 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.195 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.703 | eV/atom | — |