This is an experimental mixed-oxide semiconductor compound containing barium, thulium, and rhenium in a 2:1:1 stoichiometry. Such rare-earth rhenium oxide systems are primarily of research interest for investigating novel electronic and magnetic properties rather than established commercial use. The material likely belongs to the broader family of rare-earth perovskites or complex oxides being explored for next-generation electronics, potentially offering unique band structure or magnetic coupling effects unavailable in conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01610 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.910 | eV/atom | — |