Ba₂TbBiO₆ is an oxide semiconductor compound belonging to the double perovskite family, combining rare-earth (terbium) and bismuth elements in a barium oxide lattice. This is a research-phase material currently explored for its potential semiconducting and optoelectronic properties rather than established industrial production. The compound represents an emerging class of materials investigated for photovoltaic, photocatalytic, and light-emission applications where rare-earth doping and bismuth incorporation offer tunable band gaps and enhanced optical activity compared to simpler oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.871 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.641 | eV/atom | — |