Ba₂TaBiO₆ is an experimental complex oxide semiconductor belonging to the double perovskite family, combining barium, tantalum, and bismuth in a layered crystal structure. This compound is primarily of research interest for photocatalytic and optoelectronic applications, where its bandgap and electronic structure are being evaluated for potential use in visible-light-driven catalysis, photovoltaics, or radiation detection. The material represents an emerging class of lead-free halide alternatives being explored to address toxicity and stability concerns in next-generation semiconductor devices, though it remains largely in the laboratory development stage rather than commercial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 132.7 | GPa | — | ||
Shear Modulus(G) | -8.533 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.642 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.772 | eV/atom | — |