O6Ba2Bi2 is an experimental oxide semiconductor compound containing barium and bismuth, belonging to the family of complex metal oxides under investigation for advanced electronic and photonic applications. This material is primarily of research interest rather than established industrial use, with potential applications in next-generation semiconductors, photocatalysis, or solid-state devices where the unique electronic structure of bismuth-containing oxides offers advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01750 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.002 range -2.014–-1.991median of 2 measurements | eV/atom | — |