O6Al2Bi2 is an experimental bismuth-aluminum oxide compound representing a mixed-metal oxide semiconductor in the ternary Al-Bi-O system. This material is primarily of research interest for exploring new semiconductor phases and their electronic properties, rather than established industrial use. The compound belongs to an underexplored family of bismuth-containing oxides that show potential for optoelectronic and photocatalytic applications, though most development remains at the laboratory stage.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.917 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.327 | eV/atom | — |