O5Co1Ba1Er2 is an experimental oxide semiconductor compound containing cobalt, barium, and erbium in a mixed-valence system. This material belongs to the family of complex oxides and rare-earth-doped semiconductors currently explored in solid-state electronics research. Such compositions are investigated for potential applications in optoelectronics, magnetic semiconductors, and functional ceramics where the rare-earth dopant (erbium) can introduce unique electronic or optical properties unavailable in simpler binary or ternary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 143.5 | GPa | — | ||
Shear Modulus(G) | 58.30 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00570 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.990 | eV/atom | — |