O4Sn2 is an experimental tin oxide semiconductor compound with potential applications in advanced electronic and photonic devices. This material belongs to the tin oxide family, which has garnered significant research interest for next-generation semiconductors, transparent electronics, and optoelectronic applications where tin-based oxides offer favorable band gap properties and chemical stability. Engineers would evaluate this compound for niche applications requiring tin oxide's unique combination of optical transparency and electrical conductivity, particularly in research environments exploring alternatives to traditional silicon or indium-based semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 186.2 | GPa | — | ||
Shear Modulus(G) | 99.26 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8947 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.786 | eV/atom | — |