Bi₄O₄S₂ is a bismuth oxysuflide semiconductor compound combining bismuth, oxygen, and sulfur into a layered crystal structure. This material belongs to the family of mixed-anion semiconductors and is primarily investigated in research contexts for photocatalytic and optoelectronic applications, where its bandgap and crystal anisotropy offer advantages over conventional single-phase semiconductors in light-driven processes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 62.79 | GPa | — | ||
Shear Modulus(G) | 24.25 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9351 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.110 | eV/atom | — |