O4 Rb2 Bi2
semiconductorRb₂Bi₂O₄ is an oxide semiconductor compound composed of rubidium, bismuth, and oxygen, belonging to the family of complex metal oxides with potential photonic and electronic applications. This is primarily a research material rather than a commercially established engineering material; compounds in this family are investigated for their semiconducting properties, photocatalytic activity, and potential use in optoelectronic devices where bismuth oxides and mixed-metal oxides offer band-gap engineering opportunities. The inclusion of rubidium—an alkali metal—in the bismuth oxide structure may confer unique electrical or optical characteristics compared to simpler binary bismuth oxides, making it relevant for exploratory work in advanced ceramics and thin-film technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |