O₄K₁As₁Ag₂ is an experimental compound semiconductor combining potassium, arsenic, and silver oxides in a mixed-valence system. This material belongs to the family of complex oxyanion semiconductors and represents active research into alternative semiconductor compositions for niche applications. The compound's notable stiffness and moderate shear response suggest potential in optoelectronic or photocatalytic device research, though industrial adoption remains limited pending comprehensive characterization and scalable synthesis routes.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 66.57 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 20.40 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5299 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.105 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data