O4 Cu1 In2

semiconductor

· O4 Cu1 In2

O₄Cu₁In₂ is a ternary oxide semiconductor compound combining copper and indium oxides in a defined stoichiometry. This material belongs to the family of mixed-metal oxides and represents a research-phase compound of interest for optoelectronic and photovoltaic applications where the combination of copper and indium oxides can potentially offer tunable bandgap and carrier transport properties.

photovoltaic absorber layersthin-film solar cellsoptoelectronic devicestransparent conducting oxides (research)semiconductor heterostructuresmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.08940	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.206	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O4 Cu1 In2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control