O4Al2Tl2 is an experimental mixed-metal oxide semiconductor compound containing aluminum and thallium. This material belongs to the family of complex oxides being studied for potential optoelectronic and electronic applications, though it remains largely in the research phase without widespread commercial deployment. The thallium-aluminum oxide system is of interest to materials researchers exploring novel bandgap engineering and solid-state device properties, though practical applications remain limited compared to mature semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 101.4 | GPa | — | ||
Shear Modulus(G) | 44.16 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.285 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.291 | eV/atom | — |