O3 Zr1 Pb1 is an experimental ternary oxide semiconductor compound combining zirconium and lead oxides in a layered perovskite-type structure (O3 designation indicates the crystal stacking pattern). This material family is primarily of research interest for next-generation electronic and photonic applications, as lead-containing zirconium oxides can exhibit ferroelectric, piezoelectric, or mixed-valence electronic properties depending on synthesis and doping. While not yet commercialized at scale, such compounds are being investigated for high-temperature electronics, energy storage, and non-linear optical applications where conventional semiconductors reach performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 132.9 | GPa | — | ||
Shear Modulus(G) | 61.49 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.809 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.699 | eV/atom | — |