O3 Fe1 Bi1

semiconductor

· O3 Fe1 Bi1

O₃ Fe₁ Bi₁ is an experimental ternary oxide semiconductor compound combining iron and bismuth in a layered oxide structure. This material belongs to the family of mixed-metal oxides under active research for photocatalytic and electronic applications, where the interplay between iron and bismuth oxidation states is exploited to engineer bandgap and charge transport properties. While not yet widely commercialized, iron-bismuth oxide systems are investigated as alternatives to conventional semiconductors in energy conversion and environmental remediation contexts.

photocatalytic water splittingvisible-light photocatalysisenvironmental remediationresearch semiconductorsthin-film devicesmagnetoelectric coupling (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04740	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.321	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O3 Fe1 Bi1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control