O2 Zn3 As2 Ba2

semiconductor

· O2 Zn3 As2 Ba2

Ba₂Zn₃As₂O₂ is an experimental ternary oxide semiconductor compound combining barium, zinc, and arsenic elements. While not a mature commercial material, this composition belongs to the family of complex metal arsenide oxides being investigated for potential optoelectronic and thermoelectric applications due to the electronic properties imparted by the arsenic-containing framework. Research into such materials is driven by the need for novel semiconductors with tunable band gaps and thermal properties for next-generation energy conversion and photonic devices, though practical applications and manufacturing routes remain under development.

experimental semiconductor researchoptoelectronic devices (under development)thermoelectric materials researchphotonic applications (exploratory)materials discovery and screening

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	67.70	GPa	—
Shear Modulus(G)	38.96	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2286	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.385	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Zn3 As2 Ba2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control