O2 V1 is a semiconductor material with unspecified composition, likely representing a vanadium oxide or vanadium-based compound given its designation. This material belongs to the family of transition metal oxides, which are of significant research interest for their tunable electronic properties and potential applications in next-generation electronic and energy devices. The material's semiconductor classification suggests potential use in optoelectronic applications, gas sensing, or as a functional component in thin-film devices where vanadium oxides' metal-insulator transitions and variable oxidation states offer unique advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 79.32 | GPa | — | ||
Shear Modulus(G) | 60.99 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02730 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.346 | eV/atom | — |