O2 Tb1 is a semiconductor material from the rare-earth oxide family, likely based on terbium oxide (Tb2O3) or a terbium-doped oxide compound. This appears to be a research or specialized material rather than a widely commercialized grade. Rare-earth oxide semiconductors are investigated for optoelectronic applications, including photoluminescence, scintillation detection, and high-temperature electronic devices where conventional semiconductors fail. Engineers would consider O2 Tb1 when designing radiation detectors, specialized optical systems, or extreme-environment electronics requiring rare-earth dopants, though availability and cost typically limit adoption to niche high-performance applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 150.1 | GPa | — | ||
Shear Modulus(G) | 15.94 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01010 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.979 | eV/atom | — |