O2 Sn1

semiconductor

· O2 Sn1

O2Sn1 is a tin oxide-based semiconductor compound, likely referring to a stoichiometric or near-stoichiometric tin dioxide (SnO2) material or a tin oxide variant with controlled oxygen content. This material belongs to the family of wide-bandgap n-type semiconductors that have been extensively studied for transparent conductive applications and sensing devices. Its notable advantages include high optical transparency in the visible spectrum, good electrical conductivity when properly doped, and chemical stability, making it a practical alternative to indium tin oxide (ITO) in cost-sensitive applications or where indium supply is constrained.

transparent conductive coatingsgas sensors and environmental monitoringphotovoltaic window layersthin-film electronicsLCD and OLED display electrodesoptoelectronic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	192.3	GPa	—
Shear Modulus(G)	94.38	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.329	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.553	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Sn1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control