O₂Rb₁Tm₁ is an oxide compound containing rubidium and thulium, classified as a semiconductor material. This is a research-phase compound rather than an established industrial material; it belongs to the family of rare-earth oxide semiconductors that are investigated for their potential electronic and optical properties. The material's semiconductor behavior and rare-earth composition suggest potential relevance to advanced photonic and electronic device applications, though commercial deployment and established manufacturing routes are not currently documented.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 93.70 | GPa | — | ||
Shear Modulus(G) | 59.66 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.783 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.023 | eV/atom | — |