O2 Rb1 Tl1

semiconductor

· O2 Rb1 Tl1

O₂Rb₁Tl₁ is an experimental mixed-metal oxide semiconductor containing rubidium and thallium. This compound belongs to the family of complex metal oxides being investigated for potential optoelectronic and solid-state device applications, though it remains primarily a research material rather than a production engineering material. The incorporation of thallium—known for its electronic properties in narrow-bandgap semiconductors—alongside rubidium suggests investigation into tunable electronic behavior, though practical applications and thermal/chemical stability requirements for this specific composition remain under development.

experimental optoelectronics researchsolid-state device materialsnarrow-bandgap semiconductor developmentmaterials discovery/screeninglaboratory characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	77.30	GPa	—
Shear Modulus(G)	29.12	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9843	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.164	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Rb1 Tl1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control