O2 Rb1 Er1
semiconductorO2Rb1Er1 is an experimental erbium-rubidium oxide compound classified as a semiconductor, representing a rare-earth oxide system with mixed-cation architecture. This material family is primarily investigated in research settings for potential applications in photonics, luminescence, and solid-state electronics, where the erbium dopant can provide optical functionality and the rubidium component modifies the crystal structure and electronic properties. Engineers considering this compound should recognize it as a developmental material rather than a production-grade option; its selection would be driven by specific needs for rare-earth optical or electronic functionality in specialized research or prototype applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 92.11 | GPa | — | ||
Shear Modulus(G) | 58.17 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.706 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.003 | eV/atom | — |