O2 P4 Ba8 — Properties & Data | MatWorld

O2 P4 Ba8

semiconductor

· O2 P4 Ba8

O2 P4 Ba8 is an experimental barium-oxide phosphide semiconductor compound, likely synthesized for fundamental research into mixed-anion semiconductor systems. This material belongs to the emerging family of oxypnictide and oxyhalide semiconductors, which are being investigated for potential optoelectronic and photocatalytic applications where conventional semiconductors face limitations.

research semiconductorsphotocatalysisoptoelectronic devicesbandgap engineeringemerging materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9464	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.583	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 P4 Ba8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control