O2 Ni1 Ag1

semiconductor

· O2 Ni1 Ag1

O2Ni1Ag1 is a ternary oxide semiconductor compound combining nickel and silver with oxygen, representing an experimental mixed-metal oxide system rather than a commercial alloy. This material family is of research interest for semiconducting and optoelectronic applications where the combination of transition metal (Ni) and noble metal (Ag) dopants may enable tuned electrical conductivity, enhanced catalytic activity, or modified band structure compared to single-component oxides. Such quaternary oxide systems are typically investigated for emerging technologies including gas sensors, photocatalysts, and thin-film electronics, though maturity and availability remain limited to specialized research and development contexts.

research semiconductorsgas sensing applicationsphotocatalytic devicesthin-film electronicsmixed-metal oxide composites

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	160.6	GPa	—
Shear Modulus(G)	44.87	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00340	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Ni1 Ag1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control