O2 K2 Ni1

semiconductor

· O2 K2 Ni1

O₂K₂Ni₁ is a mixed-valent nickel oxide compound belonging to the layered perovskite family of semiconductors, likely an experimental or emerging material rather than an established commercial product. This material is of interest in research contexts for its potential electronic and ionic transport properties, particularly in applications requiring mixed oxidation state functionality such as catalysis, energy storage, or thin-film device applications. The nickel-based oxide system offers tunable electronic properties through its mixed-metal composition, making it a candidate for researchers exploring alternatives to conventional binary oxides in electrochemical or photocatalytic devices.

research and developmentcatalytic materialsenergy storage systemsthin-film semiconductorselectrochemical devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	34.67	GPa	—
Shear Modulus(G)	17.54	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.766	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 K2 Ni1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control