O2 Ce1 is a cerium oxide-based semiconductor compound, likely a doped or defective ceria system used in advanced electronic and electrochemical applications. This material family is notable for its high ionic conductivity at elevated temperatures and oxygen storage/release capabilities, making it valuable in solid oxide fuel cells, catalysis, and gas sensors where traditional semiconductors fall short. Engineers select cerium oxide systems over conventional semiconductors when applications demand simultaneous ionic transport, thermal stability, and redox activity in harsh chemical environments.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 183.8 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 81.90 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.211 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.685 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data