O2 Cd1 Hg1
semiconductorCdHgO₂ is a ternary oxide semiconductor compound combining cadmium, mercury, and oxygen—a research-phase material rather than a commercially established alloy. This material belongs to the broader family of wide-bandgap semiconductors and mixed-metal oxides, which are of interest for optoelectronic and sensing applications where tunable electronic properties are valuable. The compound's potential lies in radiation detection, photovoltaic research, and specialized sensor technologies, though it remains largely in experimental development; practitioners should verify material stability and availability before considering it for production design, as mercury-containing semiconductors face increasing regulatory scrutiny and face competition from lead-free and more stable alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |