O2 Ba1 Hg1

semiconductor

· O2 Ba1 Hg1

BaHgO₂ is an experimental oxide semiconductor compound combining barium, mercury, and oxygen in a crystalline structure. This material belongs to the family of mixed-metal oxides being investigated for potential optoelectronic and photovoltaic applications, though it remains primarily in research phase rather than established industrial production. The compound's semiconducting behavior and structural properties make it of interest in materials research focused on next-generation electronic devices, though practical deployment is limited by mercury's toxicity concerns and the material's relative instability compared to conventional semiconductor alternatives.

experimental semiconductorsphotovoltaic researchoptoelectronic devicesoxide electronicsmaterials science researchemerging thin-film applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	56.18	GPa	—
Shear Modulus(G)	13.83	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.414	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.718	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Ba1 Hg1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control