O2 Ag1 In1

semiconductor

· O2 Ag1 In1

O₂Ag₁In₁ is an experimental oxide semiconductor compound combining silver and indium with oxygen, representing a mixed-metal oxide system under active research for next-generation optoelectronic and photocatalytic applications. This material belongs to the family of transparent conducting oxides and mixed-valence oxide semiconductors, which are of significant interest for developing alternatives to indium tin oxide (ITO) in transparent electronics. The silver-indium oxide system is primarily explored in academic and industrial research settings for applications where tunable bandgap, enhanced conductivity, or improved photocatalytic activity could provide advantages over conventional binary oxide semiconductors.

transparent conducting layersphotocatalytic coatingsoptoelectronic devicesthin-film researchsolar cell electrodesadvanced ceramics development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	121.9	GPa	—
Shear Modulus(G)	40.73	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3919	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.171	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Ag1 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control