O18In2I6 is an indium iodide compound belonging to the family of metal halide semiconductors, characterized by indium and iodine constituents with oxygen incorporation. This material is primarily of research interest in optoelectronic and photovoltaic applications, where mixed-halide or oxide-halide indium compounds are explored for their tunable bandgap and potential in next-generation solar cells, photodetectors, and light-emitting devices. The inclusion of oxygen alongside iodine distinguishes it from conventional indium iodide semiconductors and may provide enhanced stability or modified electronic properties, though practical industrial deployment remains limited and material development is ongoing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.993 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6290 | eV/atom | — |