O12 Ti4 Th2 is an experimental titanium-thorium oxide compound classified as a semiconductor, likely developed for high-temperature electronic or structural applications where conventional titanium alloys fall short. This material family combines titanium's excellent strength-to-weight ratio and corrosion resistance with thorium oxide's refractory properties, suggesting potential use in extreme environments requiring both electronic functionality and thermal stability. As a research-phase compound, it represents exploration into advanced intermetallic and ceramic-metal composite systems for next-generation aerospace, nuclear, or high-temperature electronics applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 178.3 | GPa | — | ||
Shear Modulus(G) | 74.92 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.143 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.557 | eV/atom | — |