O11 Ti4 Bi2

semiconductor

· O11 Ti4 Bi2

O11 Ti4 Bi2 is an experimental titanium-bismuth oxide compound belonging to the family of mixed-metal oxides, likely developed for semiconductor or functional material applications. This material represents research into bismuth-doped titanium oxide systems, which are investigated for photocatalytic, optoelectronic, or ferroelectric properties that differ from conventional TiO₂. While not yet established as a mainstream industrial material, compounds in this family are pursued for next-generation energy conversion, sensing, or electronic device applications where bismuth incorporation modifies band structure or defect behavior.

experimental photocatalystsoptoelectronic researchphotovoltaic absorberssensor materialsferroelectric devicessolid-state electronics prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.135	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.723	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O11 Ti4 Bi2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control