O10P2Sb2 is an experimental antimony-containing oxide semiconductor compound. This material belongs to the family of mixed-metal oxides with potential applications in optoelectronic and photovoltaic research, where antimony compounds are investigated for their bandgap properties and charge-carrier characteristics. Limited industrial deployment exists at present; the material is primarily of interest to materials researchers exploring new semiconductor compositions for next-generation device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 94.44 | GPa | — | ||
Shear Modulus(G) | 54.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.747 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.827 | eV/atom | — |