O1 Rb2 is a semiconductor compound composed of rubidium and oxygen in a 1:2 stoichiometric ratio (rubidium oxide). This material belongs to the alkali metal oxide family and is primarily of research and industrial chemical interest rather than a mainstream engineering semiconductor. O1 Rb2 is encountered in specialized chemical processing, catalyst development, and emerging energy storage applications, where its basic chemical properties and reactivity are leveraged rather than semiconductor-specific electronic behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28.00 | GPa | — | ||
Shear Modulus(G) | 13.26 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.607 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.153 | eV/atom | — |