NiInN₃ is an experimental ternary nitride compound combining nickel, indium, and nitrogen—a research-phase material within the broader family of transition metal nitrides and semiconductor nitrides. This compound is primarily under investigation for potential applications in wide-bandgap semiconductors and optoelectronic devices, where the combination of elements may offer tunable electronic properties distinct from established binary nitrides like GaN or InN. While not yet commercialized at production scale, materials in this family are of interest to researchers exploring next-generation power electronics, UV emission, and high-temperature semiconductor functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 5.402 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.620 | eV/atom | — |