Ni2 Bi2 O6
semiconductorNi₂Bi₂O₆ is a nickel bismuth oxide compound belonging to the mixed-metal oxide semiconductor family, primarily investigated in materials research rather than established in high-volume production. This compound shows promise in photocatalytic and electronic device applications due to its semiconductor properties, with potential use in environmental remediation (pollutant degradation under light) and emerging energy conversion technologies. Research interest in nickel-bismuth oxides stems from their tunable bandgap, relatively low toxicity compared to some alternatives, and capacity for doping modification—making them candidates for next-generation photocatalysts and thin-film electronics where conventional semiconductors face cost or performance constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |