Ni2 Bi2 As2 O10

semiconductor

· Ni2 Bi2 As2 O10

Ni₂Bi₂As₂O₁₀ is a complex mixed-metal oxide semiconductor belonging to the family of bismuth–nickel–arsenic compounds, synthesized primarily through solid-state or hydrothermal routes. This is a research-phase material studied for potential applications in photocatalysis, optoelectronics, and solid-state chemistry; it is not yet established in mainstream industrial production. The material is notable within its compound family for its layered or framework crystal structure, which can impart directional charge transport and photogenerated carrier separation—properties of interest to researchers exploring alternatives to conventional metal oxides for environmental remediation and energy conversion.

photocatalytic water treatmentoptoelectronic researchsemiconductor physics researchenvironmental remediationthin-film coating developmentsolid-state chemistry studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.136	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.213	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ni2 Bi2 As2 O10

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control