Ni₁Te₄O₁₂ is a mixed-valence nickel tellurium oxide semiconductor compound belonging to the family of transition metal tellurates. This material is primarily of research interest rather than established industrial production, studied for its electronic and structural properties as part of broader investigations into tellurate-based semiconductors and mixed-metal oxide systems. Potential applications span optoelectronic devices, photocatalysis, and solid-state physics research, where such compounds are evaluated for band structure engineering and redox activity; however, practical deployment remains limited compared to more mature semiconductor alternatives like conventional oxides or chalcogenides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01230 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8820 | eV/atom | — |